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IDTQS742827BT Dataheets PDF



Part Number IDTQS742827BT
Manufacturers IDT
Logo IDT
Description HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER
Datasheet IDTQS742827BT DatasheetIDTQS742827BT Datasheet (PDF)

www.DataSheet4U.com IDTQS74FCT2827ATBT//CT HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER FEATURES: • • • • • • IDTQS74FCT2827AT/BT/CT DESCRIPTION: CMOS power levels: <7.5mW static Undershoot clamp diodes on all outputs True TTL input and output compatibility Ground bounce controlled outputs Reduced output swing of 0 to 3.5V Built-in 25Ω series resistor outputs reduce reflection and other system noise • A,B, and C speed .

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www.DataSheet4U.com IDTQS74FCT2827ATBT//CT HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER FEATURES: • • • • • • IDTQS74FCT2827AT/BT/CT DESCRIPTION: CMOS power levels: <7.5mW static Undershoot clamp diodes on all outputs True TTL input and output compatibility Ground bounce controlled outputs Reduced output swing of 0 to 3.5V Built-in 25Ω series resistor outputs reduce reflection and other system noise • A,B, and C speed grades with 4.4ns tPD for C • IOL = 12mA • Available in SOIC and QSOP packages The IDTQS74FCT2827T is a 10-bit buffer with 3-state outputs and a 25Ω resistor, useful for driving transmission lines and reducing system noise. The 2827T series parts can replace the 827T series to reduce noise in an existing design. All inputs have clamp diodes for undershoot noise suppression. All outputs have ground bounce suppression. Outputs will not load an active bus when Vcc is removed from the device. FUNCTIONAL BLOCK DIAGRAM Dx OE1 OE2 25Ω Yx INDUSTRIAL TEMPERATURE RANGE 1 c 2002 Integrated Device Technology, Inc. MARCH 2002 DSC-5258/4 IDTQS74FCT2827AT/BT/CT HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE PIN CONFIGURATION OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 OE2 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TSTG IOUT IIK IOK Description Terminal Voltage with Respect to GND Storage Temperature DC Output Current Max Sink Current/Pin Input Diode Current, VIN < 0 Output Diode Current, VOUT < 0 Max –0.5 to +7 –65 to +150 120 –20 –50 Unit V °C mA mA mA NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE (TA = +25°C, F = 1.0MHz) Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 8 8 Max. — — Unit pF pF NOTE: 1. This parameter is measured at characterization but not tested. SOIC/ QSOP TOP VIEW PIN DESCRIPTION Pin Names OEx I/O I Description When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are HIGH Z. 10-Bit Data Inputs 10-Bit Data Outputs Dx Yx I O FUNCTION TABLE(1) Inputs OE1 L L H X OE2 L L X H Dx L H X X Outputs Yx L H Z Z Function Transparent Transparent High-Z High-Z NOTE: 1. H = HIGH L = LOW X = Don't Care Z = High-Impedance 2 IDTQS74FCT2827ATBT//CT HIGH-SPEED CMOS BUS INTERFACE 10-BIT BUFFER INDUSTRIAL TEMPERATURE RANGE DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified: Industrial: TA = –40°C to +85°C, VCC = 5.0V ± 5% Symbol VIH VIL ∆VT IIH IIL IOZ IOR VIC VOH VOL ROUT(3) Parameter Input HIGH Level Input LOW Level Input Hysteresis Input HIGH Current Input LOW Current Off-State Output Current (Hi-Z) Current Drive Input Clamp Voltage Output HIGH Voltage Output LOW Voltage Output Resistance VCC = Max 2.0V(2) 0 ≤ VIN ≤ VCC — 50 — 2.4 — 18 — — –0.7 — — 25 ±5 — –1.2 — 0.5 40 µA mA V V V Ω VCC = Max., VOUT = VCC = Min, IIN = -18mA , TA = 25°C(2) VCC = Min. VCC = Min. VCC = Min. IOH = -15mA IOL = 12mA IOH = 12mA Test Conditions Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VTLH - VTHL for all inputs VCC = Max. 0 ≤ VIN ≤ VCC Min. 2 — — — Typ.(1) — — 0.2 — Max. — 0.8 — ±5 Unit V V V µA NOTES: 1. Typical values are at VCC = 5.0V, TA = 25°C. 2. This parameter is measured at characterization but not tested. 3. ROUT changed on March 8, 2002. See rear page for more information. POWER SUPPLY CHARACTERISTICS Following Conditions Apply Unless Otherwise Specified: Industrial: TA = –40°C to +85°C, VCC = 5.0V ± 5% Symbol ICC Parameter Quiescent Power Supply Current Test Conditions(1) VCC = Max. freq = 0 0V ≤ VIN ≤ 0.2V or VCC - 0.2V ≤ VIN ≤ Vcc VCC = Max. VIN = 3.4V(2) freq = 0 VCC = Max. Outputs Open and Enabled One Bit Toggling 50% Duty Cycle Other inputs at GND or Vcc(3,4) Min. — Max. 1.5 Unit mA ∆ICC Supply Current per Input TTL Inputs HIGH — 2 mA ICCD Supply Current per Input per MHz — 0.25 mA/MHz NOTES: 1. For conditions shown as Min. or Max., use the appropriate values specified under DC Electrical Characteristics. 2. Per TLL driven input (VIN = 3.4V). 3. For flip-flops, ICCD is measured by switching one of the data input pins so that the output changes every clock cycle. This is a measurement of device power consumption only and does not include power to drive load capacitance or tester capacitance. 4. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ∆ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TT.


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