Single MOSFET
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HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions VDSS VDGR V...
Description
www.DataSheet4U.com
HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C T C = 25 ° C; TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Note 1
VDSS
ID25
RDS(on) 0.39 Ω 0.43 Ω
IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns
Maximum Ratings 1000 1000 ± 20 ± 30 24N100 23N100 24N100 23N100 22 21 96 92 24 60 3 5 500 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A A mJ J V/ns W °C °C °C °C V~ V~
ISOPLUS 227TM (IXFE)
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features Conforms to SOT-227B outline
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS)
rated Low package inductance
Fast intrinsic Rectifier
Applications DC-DC converters
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified)
VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, ID = IT Note 2
Min.
1000 3.0
Characteristic Values Typ. Max.
V 5.0 V
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