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SPECIFICATION
Device Name Type Name Spec. No.
: : :
IGBT MODULE
2MBI100U4A-120 MS5F 6061
Mar. 09 ’05 Mar. 09 ’05
S.Miyashita T.Miyasaka
Y.Seki
K.Yamada
MS5F6061
1
13
H04-004-07b
R e v i s e d
Date Classification Ind. Content
R e c o r d s
Applied date Issued date Drawn Checked Checked Approved
Mar.-09 -’05
Enactment
T.Miyasaka K.Yamada
Y.Seki
MS5F6061
2 13
H04-004-06b
2MBI100U4A-120
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
MS5F6061
3 13
H04-004-03a
3. Absolute Maximum Ratings ( at Tc= 25o C unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25oC Tc=80oC Tc=25oC Tc=80oC Conditions
1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (*1) Viso AC : 1min. voltage Screw Mounting (*2) Terminals (*2) Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Maximum Units Ratings 1200 V ±20 V 150 100 300 A 200 100 200 540 W +150 o C -40 to +125 2500 3.5 VAC Nm
4. Electrical characteristics ( at Tj= 25o C unless otherwise specified )
Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr Conditions VCE=1200V VGE=0V VCE=0V VGE=±20V VCE=20V Ic=100mA Ic=100A VGE=15V min. 4.5
o
Characteristics typ. max. 6.5 2.05 2.25 1.90 2.10 11 0.32 0.10 0.03 0.41 0.07 1.80 1.90 1.65 1.75 1.39 1.0 200 8.5 2.20 2.05 1.20 0.60 1.00 0.30 1.95 1.80 0.35 -
Units mA nA V
Tj=25 C Tj=125oC Tj=25oC Tj=125oC VCE=10V,VGE=0V,f=1MHz Vcc=600V Ic=100A VGE=±15V RG=5.6Ω IF=100A VGE=0V Tj=25oC Tj=125oC Tj=25oC Tj=125oC
Forward on voltage
Reverse recovery time IF=100A Lead resistance, R lead terminal-chip (*3) (*3) Biggest internal terminal resistance among arm.
-
V nF
us
V us mΩ
MS5F6061
4 13
H04-004-03a
5. Thermal resistance characteristics
Items Thermal resistance(1device) Symbols Rth(j-c) IGBT FWD Conditions min. Characteristics typ. max. 0.23 0.40 Units
o
Contact Thermal resistance Rth(c-f) with Thermal Compound 0.05 (1 device) (*4) (*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
C/W
6. Indication on module Logo of production
2MBI100U4A-120
100A 1200V
Lot.No. 7. Applicable category
Place of manufacturing (code)
This specification is applied to IGBT-Module named 2MBI100U4A-120.
8. Storage and transportation notes
• The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . • Store modules in a place with few temperature changes in order to avoid condensation on the module surface. • Avoid exposure to corrosive gases and dust. • Avoid excessive external force on the module. • Store modules with unprocessed terminals. • Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
~ ~
90%
0V
L
0V V GE tr r Ir r
90%
~ ~
V CE
Vcc
Ic
90%
RG V GE
V CE Ic
0V 0A
tr ( i ) tr to n to f f
~ ~
Ic
10%
10%
V CE tf
10%
10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box
MS5F6061
5 13
H04-004-03a
11. Reliability test results
Reliability Test Items
Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test time Test methods and conditions : : : : 40N 10±1 sec. 2.5 ~ 3.5 N・m (M5) 10±1 sec. Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1)
(Aug.-2001 edition)
Mechanical Tests
Test Method 401 MethodⅠ Test Method 402 methodⅡ Test Method 403 Reference 1 Condition code B
3 Vibration
4 Shock
1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor
Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 ℃ Test duration : 1000hr. Storage temp. : -40±5 ℃ Test duration : 1000hr. Storage temp. : 85±2 ℃ Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 120±2 ℃ Test humidity : 85±5% Test duration : 96hr. Test temp. : Low temp. -40±5 ℃ High temp. 125 ±5 ℃ RT 5 ~ 35 ℃ : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100
+0 -5
5
(0:1)
Test Method 404 Condition code B
5
(0:1)
Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105
5 5 5
(0:1) (0:1) (0:1)
5
(0:1)
Environment Tests
5 Temperature Cycle
5
(0:1.