2MBI200U4B-120

www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT MODULE 2MBI200U4B-120 MS5F 6032 Feb. 09 ’05 Feb. 09 ’05 S.Miyashita T.Miyasaka Y.Seki K.Yamada MS5F6032 1 13 H04-004-07b R e v i s e d Date Classification Ind. Content R e c o r d s Applied date Issued date Drawn Checked Checked Approved Feb.-09 - ’05 Enactment T.Miyasaka K.Yamada Y.Seki MS5F6032 2 13 H04-004-06b 2MBI200U4B-120 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6032 3 13 H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25o C unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Continuous 1ms Tc=25oC Tc=80oC o Tc=25 C Tc=80oC Conditions 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation between terminal and copper base (*1) Viso AC : 1min. voltage Screw Mounting (*2) Terminals (*2) Torque (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : 2.5 to 3.5 Nm (M5) Maximum Units Ratings 1200 V ±20 V 300 200 600 A 400 200 400 1040 W +150 o C -40 to +125 2500 3.5 VAC Nm 4. Electrical characteristics ( at Tj= 25 C unless otherwise specified ) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE(th) VCE(sat) (terminal...