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AP20T03GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 50mΩ 12.5A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20T03GJ) is available for low-profile applications.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ± 20 12.5 8 40 12.5 0.1 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200107041
AP20T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. 0.02
Max. Units 50 80 3 1 25 ±100 7 430 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=8A VGS=4.5V, ID=5A
6 4 1.5 2.3 6 30 10 3 270 70 50
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VDS=VGS, ID=250uA VDS=5V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= ± 20V ID=10A VDS=24V VGS=4.5V VDS=15V ID=10A RG=3.3Ω,VGS=10V RD=1.5Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=5A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 16 9
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time2 Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.
AP20T03GH/J
20
18
18
T C =25 C
o
16
ID , Drain Current (A)
14
ID , Drain Current (A)
10V 7.0V 5.0V 4.5V
16
TC=150oC
14
10V 7.0V 5.0V 4.5V
12
12
10
10
8
8
6
6
4
4
V G =3.0V
2 0 0.0 0.5 1.0 1.5 2.0 2.5
V G =3.0V
2
0
0
1
1
2
2
3
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
1.8
ID=5A T C =25 o C
65 1.5
I D =8A V G =10V
Normalized R DS(ON)
1.3
RDS(ON)(mΩ )
55
1.0
45
0.8
35 3 5 7 9 11
0.5 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.5
10
8
2.0 6
Is (A)
T j =150 o C
4
T j =25 o C
VGS(th) (V)
1.5 1.0
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
AP20T03GH/J
14
f=1.0MHz
1000
I D = 10 A
12
VGS , Gate to Source Voltage (V)
10
V DS =15V V DS =20V V DS =24V C (pF)
100
Ciss
8
6
Coss Crss
4
2
0
10 0 3 6 9 12 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
100us
0.2
1
1ms 10ms 100ms 1s DC T c =25 C Single Pulse
o
0.1
ID (A)
0.1
0.05
0.02
PDM
t
0.01
0.1
T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + TC
0.01
0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
.