B12V105

www.DataSheet4U.com BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the B12V105 an excellent choice for battery applications. From 10 mA to greater than 25 mA, ft is nominally 10 GHz. Maximum recommended continuous current is 40 mA. A broad range of packages are offered including SOT-23, SOT143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 20 12 1.5 40 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 10 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz, I C = 10 mA I C = 25 mA f = 2.0 GHz, I C = 10 mA IC = 25 mA f = 1.0 GHz f ...