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BAR63V-02V Dataheets PDF



Part Number BAR63V-02V
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description RF PIN Diode
Datasheet BAR63V-02V DatasheetBAR63V-02V Datasheet (PDF)

www.DataSheet4U.com BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems. 1 1 2 2 16863 Features • Low forward resistance.

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www.DataSheet4U.com BAR63V-02V Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diode are wireless, mobile and TV-systems. 1 1 2 2 16863 Features • Low forward resistance • Space saving SOD-523 package with low series inductance • Very small reverse capacitance • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC RF-signal tuning Mobile, wireless and TV-Applications e3 Mechanical Data Case: SOD-523 Plastic case Weight: approx. 1.6 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Applications For frequency up to 3 GHz Parts Table Part BAR63V-02V Ordering code BAR63V-02V-GS18 or BAR63V-02V-GS08 C Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 50 100 150 - 55 to + 150 Unit V mA °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction soldering point Test condition Symbol RthJS Value 100 Unit K/W Document Number 85642 Rev. 1.5, 29-Jun-05 www.vishay.com 1 BAR63V-02V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Forward resistance Test condition IR = 10 µA VR = 35 V IF = 100 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 5 V f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 5 mA f = 100 MHz, IF = 10 mA Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol VR IR VF CD CD rf rf rf trr 0.28 0.23 2.0 1.1 0.9 115 2.0 0.3 Min 50 10 1.2 Typ. Max Unit V nA V pF pF Ω Ω Ω ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 6 rf - Forward Resistance ( W ) 5 4 3 2 1 0 0.1 f = 100 MHz 100.00 I F - Forward Current ( mA ) 10.00 1.00 0.10 18341_1 1.0 10 IF - Forward Current ( mA ) 100 0.01 0.5 18325 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage ( V ) Figure 1. Forward Resistance vs. Forward Current Figure 3. Forward Current vs. Forward Voltage 0.30 CD - Diode Capacitance ( pF ) 120 f = 1 MHz V R - Reverse V oltage ( V ) 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 28 100 80 60 40 20 0 0.01 0.1 1.0 10 100 1000 18333 VR - Reverse V oltage (V) 18329 IR - Reverse Current ( µA ) Figure 2. Diode Capacitance vs. Reverse Voltage Figure 4. Reverse Voltage vs. Reverse Current www.vishay.com 2 Document Number 85642 Rev. 1.5, 29-Jun-05 BAR63V-02V Vishay Semiconductors 12 10 I F - Forward Current ( mA ) 8 6 4 2 0 -2 -4 -6 -8 -50 0 50 IF = 10 mA IR = 6 mA i rr = 3 mA 100 150 200 18337 Recovery Time ( ns ) Figure 5. Typical Charge Recovery Curve Package Dimensions in mm (Inches) 0.15 (0.006) ISO Method E 0.22 (0.008) 0.16 (0.006) 1.6 (0.062) 0.8 (0.031) Mounting Pad Layout 1.35 (0.053) 0.3 (0.012) 0.15 A A 1.2 (0.047) 0.39 (0.015) 0.35 (0.014) 16864 Document Number 85642 Rev. 1.5, 29-Jun-05 0.6 (0.023) www.vishay.com 3 BAR63V-02V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and .


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