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CHT3946UPNPT Dataheets PDF



Part Number CHT3946UPNPT
Manufacturers Chenmko
Logo Chenmko
Description SURFACE MOUNT Complementary Small Signal Transistor
Datasheet CHT3946UPNPT DatasheetCHT3946UPNPT Datasheet (PDF)

www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT3946UPNPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) SC-88/SOT-363 1.

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www.DataSheet4U.com CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT3946UPNPT CURRENT 0.2 Ampere FEATURE * Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. (1) (6) SC-88/SOT-363 1.3±0.1 0.1 (3) 0.2±0.05 1.25±0.1 (4) 0.65 0.65 2.0±0.2 CONSTRUCTION * Complementary Pair * One CH3904-Type NPN One CH3906-Type PNP MARKING * U4 6 4 0.15±0.05 0.1 Min. 0.9±0.1 0.7±0.1 0~0.1 2.1±0.1 CIRCUIT 1 3 Dimensions in millimeters SC-88/SOT-363 CH3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 − − − − − − 65 MIN. MAX. 60 40 6 200 200 +150 V V V mA mW °C UNIT CH3906 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 − − − − − −65 MIN. MAX. -40 -40 -5 -200 200 +150 V V V mA mW °C UNIT Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 RATING CHARACTERISTIC CURVES ( CHT3946UPNPT ) CH3904 THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W CH3904 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise Þgure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 40 70 100 60 30 − − 650 − − − 300 − − − 300 − − 200 300 850 950 4 8 − 5 mV mV mV mV pF pF MHz dB − − MIN. MAX. 50 50 UNIT nA nA Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − − − − − − 65 35 35 240 200 50 ns ns ns ns ns ns RATI.


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