Document
www.DataSheet4U.com
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Complementary Small Signal Transistor
VOLTAGE 40 Volts
APPLICATION
* Telephony and proferssional communction equipment. * Other switching applications.
CHT3946UPNPT
CURRENT 0.2 Ampere
FEATURE
* Small surface mounting type. (SC-88/SOT363) * Low current (Max.=200mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch.
(1) (6)
SC-88/SOT-363
1.3±0.1 0.1 (3) 0.2±0.05 1.25±0.1
(4)
0.65 0.65
2.0±0.2
CONSTRUCTION
* Complementary Pair * One CH3904-Type NPN One CH3906-Type PNP
MARKING
* U4
6 4
0.15±0.05 0.1 Min.
0.9±0.1 0.7±0.1 0~0.1 2.1±0.1
CIRCUIT
1
3
Dimensions in millimeters
SC-88/SOT-363
CH3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 − − − − − − 65 MIN. MAX. 60 40 6 200 200 +150 V V V mA mW °C UNIT
CH3906 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current DC total power dissipation storage temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 − − − − − −65 MIN. MAX. -40 -40 -5 -200 200 +150 V V V mA mW °C UNIT
Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-8
RATING CHARACTERISTIC CURVES ( CHT3946UPNPT )
CH3904 THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W
CH3904 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise Þgure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz 40 70 100 60 30 − − 650 − − − 300 − − − 300 − − 200 300 850 950 4 8 − 5 mV mV mV mV pF pF MHz dB − − MIN. MAX. 50 50 UNIT nA nA
Switching times (between 10% and 90% levels); ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − − − − − − 65 35 35 240 200 50 ns ns ns ns ns ns
RATI.