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DG3000
Vishay Siliconix
Low-Voltage Single SPDT MICRO FOOTtAnalog Switch
FEATURES
D MICRO FOOT Chip Scale Package (1.07 x 1.57 mm) D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 1.4 W D Fast Switching - tON : 24 ns, tOFF: 9 ns D Low Power Consumption D TTL/CMOS Compatible
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems PCM Cards PDA
DESCRIPTION
The DG3000 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 24 ns, tOFF: 9 ns), low on-resistance (rDS(on): 1.4 W) and small physical size (MICRO FOOT, 6-bump), the DG3000 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG3000 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG3000.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump)
TRUTH TABLE
IN V+ GND
B1 A1
NO (Source1) COM NC (Source2)
Logic
0 1
NC
ON OFF
NO
OFF ON
B2
A2
B3
A3
Top View A1 Locator 3000
ORDERING INFORMATION Temp Range
-40 to 85°C
Package
MICRO FOOT: 6-Bump (2 x 3, 0.5-mm Pitch)
Part Number
DG3000DB
Device Marking: 3000 xxx = Date/Lot Traceability Code
XXX
Document Number: 71742 S-21483—Rev. C, 26-Aug-02
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DG3000
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Package Reflow Conditionsb VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215°C IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A). No hand/manual solder rework recommended c All bumps soldered to PC Board. d Derate 6.5 mW/_C above 25_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Fulld Room Room Fulld Room Fulld Room Fulld -700 -1 1 -700 -1 1 -700 -1 1 0 17 V+ 20 22.5 W 14 700 11 700 11 700 11 pA nA pA nA pA nA V
Limits
-40 to 85_C
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Currentf
V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentd
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 5 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W, CL = 5 pF, f = 1 MHz VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF Figures 1 and 2 Room Fulld Room Fulld Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 98 1 61 17 45 2 -61 -67 31 pF dB pC 76 79 33 36 ns
Power Supply
Power Supply Range Power Supply Currentd Power Consumption V+ I+ PC VIN = 0 or V+ 1.8 0.1 2.2 1.0 2.2 V mA mW
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Document Number: 71742 S-21483—Rev. C, 26-Aug-02
DG3000
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistanced rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Full Room Full Room Full -800 -13 -800 -13 -800 -13 0 3.3 3.4 1.3 800 13 800 13 80.