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Rev 0; 4/05
3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock
General Description
The DS3050W consists of a static RAM, a nonvolatile (NV) controller, a year 2000-compliant real-time clock (RTC), and an internal rechargeable manganese lithium (ML) battery. These components are encased in a surface-mount module with a 256-ball BGA footprint. Whenever VCC is applied to the module, it recharges the ML battery, powers the clock and SRAM from the external power source, and allows the contents of the clock registers or SRAM to be modified. When VCC is powered down or out-of-tolerance, the controller writeprotects the memory contents and powers the clock and SRAM from the battery. The DS3050W also contains a power-supply monitor output (RST), as well as a user-programmable interrupt output (IRQ/FT).
Features
♦ Single-Piece, Reflowable, 27mm x 27mm BGA Package Footprint ♦ Internal Manganese Lithium Battery and Charger ♦ Integrated Real-Time Clock ♦ Unconditionally Write-Protects the Clock and SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when VCC Power Failures Occur ♦ Reset Output can be Used as a CPU Supervisor ♦ Interrupt Output can be Used as a CPU Watchdog Timer ♦ Industrial Temperature Range (-40°C to + 85°C) ♦ UL Recognized
DS3050W
Applications
RAID Systems and Servers POS Terminals Industrial Controllers Data-Acquisition Systems Gaming Fire Alarms PLCs Routers/Switches
Ordering Information
PART DS3050W-100 TEMP RANGE -40°C to +85°C PIN-PACKAGE 256-ball 27mm x 27mm BGA Module SPEED 100ns SUPPLY VOLTAGE (%) 3.3V ±0.3V
Typical Operating Circuit
CE WR RD CS CE WE OE CS
MICROPROCESSOR OR DSP DATA
DS3050W
8 BITS DQ0–7
512k x 8 NV SRAM AND RTC
ADDRESS
19 BITS
A0–18
INT INT
IRQ/FT RST
Pin Configuration appears at end of data sheet. ______________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock DS3050W
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground......-0.3V to +4.6V Operating Temperature Range ...........................-40°C to +85°C Storage Temperature Range ...............................-40°C to +85°C Soldering Temperature Range .......See IPC/JEDEC J-STD-020C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(TA = -40°C to +85°C.)
PARAMETER Supply Voltage Input Logic 1 Input Logic 0 SYMBOL VCC VIH VIL CONDITIONS MIN 3.0 2.2 0.0 TYP 3.3 MAX 3.6 VCC 0.4 UNITS V V V
DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ±0.3V, TA = -40°C to +85°C.)
PARAMETER Input Leakage Current I/O Leakage Current Output-Current High Output-Current Low Output-Current Low RST Output-Current Low IRQ/FT Standby Current Operating Current Write Protection Voltage SYMBOL IIL IIO IOH IOL IOL RST ICCS1 ICCS2 ICCO1 VTP CE = CS = VCC At 2.4V At 0.4V At 0.4V (Note 1) CE = CS = 2.2V CE = CS = VCC - 0.2V tRC = 200ns, outputs open 2.8 2.9 CONDITIONS MIN -1.0 -1.0 -1.0 2.0 8.0 7.0 0.5 0.2 7 5 50 3.0 TYP MAX +1.0 +1.0 UNITS µA µA mA mA mA mA mA mA V
IOL IRQ/FT At 0.4V (Note 1)
PIN CAPACITANCE
(TA = +25°C.)
PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN COUT CONDITIONS Not production tested Not production tested MIN TYP 15 15 MAX UNITS pF pF
2
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3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock
AC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ±0.3V, TA = -40°C to +85°C.)
PARAMETER Read Cycle Time Access Time OE to Output Valid RTC OE to Output Valid CE or CS to Output Valid OE or CE or CS to Output Active Output High Impedance from Deselection Output Hold from Address Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High Impedance from WE Output Active from WE Data Setup Time Data Hold Time Chip-to-Chip Setup Time SYMBOL tRC tACC tOE tOEC tCO tCOE tOD tOH tWC tWP tAW tWR1 tWR2 tODW tOEW tDS tDH1 tDH2 tCCS (Note 4) (Note 5) (Note 2) (Note 2) (Note 6) (Note 4) (Note 5) 5 40 0 20 40 (Note 3) (Note 2) (Note 2) 5 100 75 0 5 20 40 5 40 CONDITIONS DS3050W-100 MIN 100 100 50 60 100 MAX UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
DS3050W
POWER-DOWN/POWER-UP TIMING
(TA = -40°C to +85°C.)
PARAMETER VCC Fail Detect to CE, CS, and WE Inactive VCC Slew from VTP to 0V VCC Slew from 0V to VTP VCC Valid to CE, CS, and WE Inactive VCC Valid to End of Write Protection VCC Fail Detect to RST Active VCC Valid to RST Inactive SYMBOL tPD tF tR tPU tREC tRPD tRPU (Note 1) (Note 1) .