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PD - 94643
HEXFET® POWER MOSFET SURFACE MOUNT (SMD-1)
IRF7N1405 55V, N-CHANNEL
Product Summary
Part Number
IRF7N1405 BVDSS
55V
RDS(on) ID 0.0053Ω 55A*
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-1
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight * Current is limited by package For footnotes refer to the last page 55* 55* 220 100 0.8 ±20 245 55 10 1.8 -55 to 150 300 (for 5s) 2.6 (Typical)
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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1
04/14/03
IRF7N1405
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
55 — — 2.0 68 — — — — — — — — — — — —
Typ Max Units
— 0.061 — — — — — — — — — — — — — — 4.0 — — 0.0053 4.0 — 25 250 200 -200 200 40 80 20 90 200 150 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 55A ➃ VDS = VGS, ID = 250µA VDS =25V, IDS = 55A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 55A VDS = 44V VDD = 28V, ID = 55A, VGS = 10V, RG = 2.4Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
5100 1290 300
— — —
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
— — — — — — — — — — 55* 220 1.3 130 380
Test Conditions
A
V ns nC Tj = 25°C, IS = 55A, VGS = 0V ➃ Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max
— — 1.25
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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IRF7N1405
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
1000
ID, Drain-to-Source Current (A)
BOTTOM
100
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100 4.5V
4.5V 20 µs PULSE WIDTH Tj = 25°C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
20 µs PULSE WIDTH Tj = 150°C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 55A
ID , Drain-to-Source Current ( Α )
2.0
100
T J = 150°C
1.5
T J = 25°C
1.0
0.5
10 4 4.5 5
VDS = 25V 15 20 µs PULSE WIDTH 5.5 6 6.5 7
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7N1405
9000
7500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12 ID= 55A VDS= 44V VDS= 28V VDS= 11V
C, Capacitance (pF)
6000
Ciss
8
4500
3000
C oss Crss
1 10 100
4
1500
FOR TEST CIRCUIT SEE FIGURE 13 0 0 20 40 60 80 100 120 140
0
VDS , Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5. Typical Capacita.