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PD - 91782
IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U ® HEXFET TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556]
N-CHANNEL 400Volt, 3.6Ω , HEXFET
The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.
Product Summary
Part Number IRFE310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A
Features:
n n n n n n
Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Surface Temperature Weight IRFE310, JANTX-, JANTXV-, 2N6786U Units 1.25 A 0.80 5.5 15 W 0.12 W/°C ±20 V 34 mJ 2.8 V/ns -55 to 150
o
C
300 ( for 5 seconds) 0.42 (typical)
g
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1
10/9/98
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
400 — — — 2.0 0.87 — — — — — — — — — — — — —
Typ Max Units
— 0.37 — — — — — — — — — — — — — — — 5.0 15 — — 3.6 3.7 4.0 — 25 250 100 -100 8.4 1.6 5.0 15 20 35 30 — — V V/°C
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 0.8A VGS = 10V, ID = 1.25A VDS = VGS, ID = 250µA VDS > 15V, IDS = 0.8A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V, ID = 1.25A VDS = Max Rating x 0.5 VDD = 15V, ID = 1.25A, RG = 7.5Ω
V S( ) µA Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-.