Voltage IGBT. IXGT6N170A Datasheet

IXGT6N170A IGBT. Datasheet pdf. Equivalent


Part IXGT6N170A
Description High Voltage IGBT
Feature www.DataSheet4U.com Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 V.
Manufacture IXYS Corporation
Datasheet
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IXGT6N170A
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High Voltage
IGBT
Advance Technical Data
IXGH 6N170A
IXGT 6N170A
VCES
IC25
V
CE(sat)
tfi(typ)
= 1700 V
= 6A
= 7.0 V
= 32 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tSC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
1700
1700
±20
±30
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
6
3
14
VGE = 15 V, TVJ = 125°C, RG = 33
Clamped inductive load
ICM = 12
@ 0.8 V
CES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 33
10
V
V
V
V
A
A
A
A
µs
PC TC = 25°C
TJ
T
JM
Tstg
75
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Md Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
300
6
4
°C
g
g
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
C (TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Rugged NPT structure
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
1700
3.0
VCE = 0.8 • VCES
V =0V
GE
TJ = 25°C
Note 1
T
J
=
125°C
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
5.0
10
500
±100
5.5 7.0
6.5
V
V
µA
µA
nA
V
V
Applications
z Capacitor discharge & pulser circuits
z AC motor speed control
z DC servo and robot drives
z DC choppers
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS98990A(01/03)



IXGT6N170A
Symbol
gfs
C
ies
Coes
C
res
QG
Q
GE
QGC
td(on)
t
ri
td(off)
tfi
Eoff
td(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC25; VCE = 20 V
Note 2
VCE = 25 V, VGE = 0 V, f = 1 MHz
2 3.5
330
23
6
S
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
RG = 33 Ω, VCE = 0.5 VCES
20 nC
3.6 nC
8 nC
46
40
220
32
0.19
ns
ns
450 ns
65 ns
0.40 mJ
Inductive load, TJ = 125°C
I = I , V = 15 V
C C25 GE
RG = 33 Ω, VCE = 0.5 VCES
(TO-247)
48
43
0.7
230
41
0.26
ns
ns
mJ
ns
ns
mJ
1.65 K/W
0.25
K/W
IXGH 6N170A
IXGT 6N170A
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t 300 µs, duty cycle 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC
.010 BSC
L4 3.80 4.10 .150 .161
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025





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