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Part Number IXTQ36N30P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTQ36N30P DatasheetIXTQ36N30P Datasheet (PDF)

  IXTQ36N30P   IXTQ36N30P
PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 300 V 36 A 110 mΩ Symbol Test Conditions TO-263 (IXTA) Maximum Ratings VDSS V DGR VGS VGSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg T L TSOLD Md Weight TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 300 V 300 V ±30 V ±40 V 36 A 90 A 36 A 30 mJ 1.0 J 10 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 300 V VGS(th) VDS = .



IXTP36N30P IXTQ36N30P IXTA3N110


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