Document
PolarHTTM Power MOSFET
IXTA 36N30P IXTP 36N30P IXTQ 36N30P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
300 V 36 A
110 mΩ
Symbol
Test Conditions
TO-263 (IXTA) Maximum Ratings
VDSS V
DGR
VGS VGSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
T L
TSOLD Md Weight
TJ = 25° C to 150° C
T J
=
25°
C
to
150°
C;
R GS
=
1
MΩ
Continuous Transient
TC = 25° C TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263
300
V
300
V
±30
V
±40
V
36
A
90
A
36
A
30
mJ
1.0
J
10
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
5.5
g
4
g
3
g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max.
300
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.5 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
1 µA 200 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
92 110 m Ω
G S
D(TAB)
TO-220 (IXTP)
G DS TO-3P (IXTQ)
D(TAB)
G D S
G = Gate S = Source
D(TAB)
D = Drain TAB = Drain
Features
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
© 2005 IXYS All rights reserved
DS99155E(10/05)
Symbol
g fs
Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
IXTA 36N30P IXTP 36N30P IXTQ 36N30P
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
V = 10 V; I = 0.5 I , pulse test
12 22
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
2250
pF
370
pF
90
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 Ω (External)
24
ns
30
ns
97
ns
28
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70
nC
17
nC
35
nC
(TO-3P) (TO-220)
0.21 0.25
0.42° C/W
° C/W ° C/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
IS
VGS = 0 V
36 A
ISM
Repetitive
90 A
V
I = I , V = 0 V,
SD
F S GS
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
1.5 V
trr
IF = 25 A, -di/dt = 100 A/µs
Q
V = 100 V, V = 0 V
RM
R
GS
250
ns
2.0
µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
I D - Amperes
I D - Amperes
.