Power MOSFET
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120...
Description
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTA3N120 IXTP3N120 IXTH3N120
Symbol
VDSS VDGR VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
1200
V
1200
V
20
V
30
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C TC = 25C
3 12
3 700
5 200 -55 ... +150 150 -55 ... +150
A A A mJ
V/ns W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-247 & TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values Min. Typ. Max.
BVDSS
VGS = 0V, ID = 1mA
1200
V
VGS(th)
VDS = VGS, ID = 250A
2.5
5.0 V
IGSS
VGS = 20V, VDS = 0V
100 nA
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
25 A 1 mA
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
4.5
VDSS =
ID25 = RDS(on)
1200V 3A 4.5
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S TO-247 (IXTH)
D (Tab)
G D S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages High Voltage Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0
Flammability Classification High Blocking Voltage
Advant...
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