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IXTA3N50P Dataheets PDF



Part Number IXTA3N50P
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTA3N50P DatasheetIXTA3N50P Datasheet (PDF)

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N50P IXTA3N50P IXTP3N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 8 3 180 10 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C .

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N50P IXTA3N50P IXTP3N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 8 3 180 10 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 50μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 500 V 3.0 5.5 V 100 nA 5 A 50 A 2 VDSS = ID25 =  RDS(on) 500V 3A 2 TO-252 (IXTY) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) GDS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators High Voltage Pulse Power Applications © 2017 IXYS CORPORATION, All Rights Reserved DS99200F(6/17) IXTY3N50P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20 (External) RthJC RthCS TO-220 Characteristic Values Min. Typ. Max 2.5 3.5 S 409 pF 48 pF 6.1 pF 9.3 nC 3.3 nC 3.4 nC 15 ns 15 ns 38 ns 12 ns 1.8 C/W 0.50 C/W IXTA3N50P IXTP3N50P Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 3A, -di/dt = 100A/μs, VR = 100V Characteristic Values Min. Typ. Max 3A 9A 1.5 V 400 ns Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734B2 7,157,338B2 6,710,405B2 6,759,692 7,063,975B2 6,710,463 6,771,478B2 7,071,537 ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 3.0 VGS = 10V 8V 2.5 7V 2.0 1.5 1.0 6V 0.5 0.0 0 3.0 2.5 2.0 1.5 1 2 3 4 5 6 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC VGS = 10V 7V 6V 1.0 0.5 5V 0.0 0 2 4 6 8 10 12 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current 3.0 VGS = 10V 2.6 TJ = 125oC 2.2 1.8 TJ = 25oC 1.4 1.0 0.6 0 1 2 3 4 5 6 7 8 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXTY3N50P IXTA3N50P IXTP3N50P Fig. 2. Extended Output Characteristics @ TJ = 25oC 8 VGS = 10V 7 8V 6 5 7V 4 3 2 6V 1 0 0 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature 2.6 VGS = 10V 2.2 I D = 3A 1.8 I D = 1.5A 1.4 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes RDS(on) - Normalized © 2017 IXYS CORPORATION, All Rights Reserved IXTY3N50P IXTA3N50P IXTP3N50P ID - Amperes Fig. 7. Input Admittance 6 5 4 3 TJ = 125oC 25oC 2 - 40oC 1 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 VGS - Volts g f s - Siemens Fig. 8. Transconductance 8 TJ = - 40oC 7 6 25oC 5 4 125oC 3 2 1 0 0 1 2 3 4 5 6 7 ID - Amperes IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 9 8 7 6 5 4 3 TJ = 125oC 2 TJ = 25oC 1 VGS - Volts 10 9 VDS = 250V I D = 1.5A 8 I G = 10mA 7 6 5 4 3 2 1 Fig. 10. Gate Charge 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 VSD - Volts 2 4 6 8 10 QG - NanoCoulombs Fig. 11. Capacitance 1,000 Fig. 12. Forward-Bias Safe Operatin.


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