Document
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY3N50P IXTA3N50P IXTP3N50P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
500
V
500
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
3 8 3 180 10 70 -55 ... +150 150 -55 ... +150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-252 TO-263 TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.0
5.5 V
100 nA
5 A 50 A
2
VDSS =
ID25 = RDS(on)
500V 3A 2
TO-252 (IXTY)
G S
TO-263 (IXTA)
D (Tab)
G S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge
Circiuts
in
Lasers,
Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS99200F(6/17)
IXTY3N50P
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 20 (External)
RthJC RthCS
TO-220
Characteristic Values Min. Typ. Max
2.5
3.5
S
409
pF
48
pF
6.1
pF
9.3
nC
3.3
nC
3.4
nC
15
ns
15
ns
38
ns
12
ns
1.8 C/W
0.50
C/W
IXTA3N50P IXTP3N50P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 3A, -di/dt = 100A/μs, VR = 100V
Characteristic Values Min. Typ. Max
3A
9A
1.5 V
400
ns
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123B1 6,306,728B1
6,404,065B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
3.0 VGS = 10V 8V
2.5 7V
2.0
1.5
1.0
6V 0.5
0.0 0
3.0 2.5 2.0 1.5
1
2
3
4
5
6
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
VGS = 10V 7V
6V
1.0
0.5
5V
0.0
0
2
4
6
8
10
12
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current
3.0
VGS = 10V
2.6 TJ = 125oC
2.2
1.8 TJ = 25oC
1.4
1.0
0.6
0
1
2
3
4
5
6
7
8
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTY3N50P IXTA3N50P IXTP3N50P
Fig. 2. Extended Output Characteristics @ TJ = 25oC
8
VGS = 10V
7
8V
6
5
7V
4
3
2
6V 1
0
0
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature
2.6
VGS = 10V
2.2
I D = 3A 1.8
I D = 1.5A 1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
RDS(on) - Normalized
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY3N50P IXTA3N50P IXTP3N50P
ID - Amperes
Fig. 7. Input Admittance
6
5
4
3
TJ = 125oC
25oC
2
- 40oC
1
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGS - Volts
g f s - Siemens
Fig. 8. Transconductance
8
TJ = - 40oC 7
6 25oC
5
4
125oC
3
2
1
0
0
1
2
3
4
5
6
7
ID - Amperes
IS - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
9
8
7
6
5
4
3
TJ = 125oC
2
TJ = 25oC
1
VGS - Volts
10
9
VDS = 250V
I D = 1.5A
8
I G = 10mA
7
6
5
4
3
2
1
Fig. 10. Gate Charge
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
VSD - Volts
2
4
6
8
10
QG - NanoCoulombs
Fig. 11. Capacitance
1,000
Fig. 12. Forward-Bias Safe Operatin.