NE67400

www.DataSheet4U.com NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 GATE WIDTH: WG = 280 µm GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. 1.0 8 NF 0 1 2 4 6 8 10 14 20 30 4 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz, VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 V Gate to Source Cut Off Voltage at VDS = 3 V, ID = 100 µA Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leakage Current at VGS = -5 V Thermal Resistance (Channel-to-Case) NE67400 NE67483B UNITS dB dB dB dB MIN NE67400 NE67483B TYP 0.6 1.4 14.0 10.0 ...