NE678M04

www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) 0.59±0.05 +0.11-0.05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 8.0 120 18.0 13.0 13.5 10.5 55 1.7 12.0 0.42 0.7 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE678M04 M04 2SC5753 UNITS nA nA MIN TYP +0.01 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 30 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm Linear Gain at VCE = 2.8 V, I...