NP80N03ELE

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N03CLE NP80N03DLE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK) FEATURES Channel Temperature 175 degree rated Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) Low Ciss : Ciss = 2600 pF TYP. Built-in Gate Protection Diode 5 NP80N03ELE NP80N03KLE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±80 ±320 1.8 120 175 –55 to +175 50 / 40 / 9 2.5 / 160 / 400 V V A A W W °C °C A mJ (TO-262) Drain Current (Pulse) Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.) (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W The information in this docume...