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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING N-CHA...
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DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP80N03CLE,NP80N03DLE,NP80N03ELE NP80N03KLE
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N03CLE NP80N03DLE PACKAGE TO-220AB TO-262 TO-263 (MP-25ZJ) TO-263 (MP-25ZK)
FEATURES
Channel Temperature 175 degree rated Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) Low Ciss : Ciss = 2600 pF TYP. Built-in Gate Protection Diode
5
NP80N03ELE NP80N03KLE
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±80 ±320 1.8 120 175 –55 to +175 50 / 40 / 9 2.5 / 160 / 400
V V A A W W °C °C A mJ (TO-262)
Drain Current (Pulse)
Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (see Figure 4.)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.25 83.3 °C/W °C/W
The information in this docume...