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Product Specification
PE4125
Product Description
The PE4125 is a high linearity, passive Quad MOSFET Mixer for GSM 800 & Cellular Base Station Receivers and exhibits high dynamic range performance over a broad LO drive range up to 20 dBm. This mixer integrates passive matching networks to provide single-ended interfaces for the RF and LO ports, eliminating the need for external RF baluns or matching networks. The PE4125 is optimized for frequency down-conversion using high-side LO injection for GSM 800 & Cellular Base Station applications, and is also suitable for use in up-conversion applications. The PE4125 is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram High Linearity Quad MOSFET Mixer for GSM 800 & Cellular BTS Features
• Integrated, single-ended RF & LO
interfaces
• High linearity: IIP3 > +32 dBm,
820 - 920 MHz (+17 dBm LO)
• Low conversion loss: 6.9 dB
(+17 dBm LO)
• High isolation: typical LO-IF at 43 dB,
LO-RF at 31 dB
• Designed for low-side LO injection
Figure 2. Package Type
8-lead TSSOP
LO
RF
PE4125
IF
Table 1. AC and DC Electrical Specifications @ +25 °C (ZS = ZL = 50 Ω)
Parameter
Frequency Range: LO RF IF1 Conversion Loss2 Isolation: LO-RF LO-IF Input IP3 Input 1 dB Compression Notes: 30 38 30
Minimum
890 820 --
Typical
--70 7.0 31.5 40 32 22
Maximum
990 920 -7.4
Units
MHz MHz MHz dB dB dB dBm dBm
1. An IF frequency of 70 MHz is a nominal frequency. The IF frequency can be specified by the user as long as the RF and LO frequencies are within the specified maximum and minimum. 2. Conversion Loss includes loss of IF transformer (M/A COM ETC1-1-13, nominal loss 0.7dB at 70 MHz).
*Test conditions unless otherwise noted: IF = 70 MHz, LO input drive = 17 dBm, RF input drive = 3 dBm. Document No. 70-0044-05 │ www.psemi.com
©2006 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 8
PE4125
Product Specification
Figure 3. Pin Configuration (Top View)
Table 3. Absolute Maximum Ratings
Symbol Parameter/Conditions
Storage temperature range Operating temperature range LO input power RF input power ESD Sensitive Device
Min
-65 -40
Max
150 85 20 12 250
Units
°C °C dBm dBm V
LO GND RF
1 2 3
8 7 6 5
GND IF1
TST TOP PLO
IF2 GND
PRF VESD
GND
4
PE4125
Table 2. Pin Descriptions
Pin No.
1
Pin Name
LO LO Input
Description
Absolute Maximum Ratings are those values listed in the above table. Exceeding these values may cause permanent device damage. Functional operation should be restricted to the limits in the DC Electrical Specifications table. Exposure to absolute maximum ratings for extended periods may affect device reliability. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devic.