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PE4231

Peregrine Semiconductor

SPDT High Power UltraCMOS

www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch i...


Peregrine Semiconductor

PE4231

File Download Download PE4231 Datasheet


Description
www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package. The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFCommon SPDT High Power UltraCMOS™ DC – 1.3 GHz RF Switch Features Optimized for 75 Ω systems Single +3-volt power supply Low insertion loss: 0.80 dB at 1.0 GHz High isolation: 42 dB at 1.0 GHz Typical input 1 dB compression point of +32 dBm Single-pin CMOS or TTL logic control Low cost Figure 2. Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 Ω) Parameter Operation Frequency Insertion Loss Isolation – RFCommon to RF1/RF2 Isolation – RF1 to RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Video Feedthrough 2 3 1 Conditions 50 MHz 1000 MHz 50 MHz 1000 MHz 50 MHz 1000 MHz...




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