DatasheetsPDF.com

PE4231 Dataheets PDF



Part Number PE4231
Manufacturers Peregrine Semiconductor
Logo Peregrine Semiconductor
Description SPDT High Power UltraCMOS
Datasheet PE4231 DatasheetPE4231 Datasheet (PDF)

www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better th.

  PE4231   PE4231


Document
www.DataSheet4U.com Product Specification PE4231 Product Description The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package. The PE4231 SPDT High Power UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram RFCommon SPDT High Power UltraCMOS™ DC – 1.3 GHz RF Switch Features • Optimized for 75 Ω systems • Single +3-volt power supply • Low insertion loss: 0.80 dB at 1.0 GHz • High isolation: 42 dB at 1.0 GHz • Typical input 1 dB compression point of +32 dBm • Single-pin CMOS or TTL logic control • Low cost Figure 2. Package Type 8-lead MSOP RF1 RF2 CMOS Control Driver CTRL Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 Ω) Parameter Operation Frequency Insertion Loss Isolation – RFCommon to RF1/RF2 Isolation – RF1 to RF2 Return Loss ‘ON’ Switching Time ‘OFF’ Switching Time Video Feedthrough 2 3 1 Conditions 50 MHz 1000 MHz 50 MHz 1000 MHz 50 MHz 1000 MHz 1000 MHz CTRL to 0.1 dB final value, 2 GHz CTRL to 25 dB isolation, 2 GHz Minimum DC Typical 0.50 Maximum 1300 0.60 0.90 Units MHz dB dB dB dB ns ns mVpp dBm dBm 73 40 58 33 16 0.80 75 42 60 35 17 2000 900 15 Input 1 dB Compression Input IP3 Notes: 3 1000 MHz 1000 MHz, 17 dBm 30 50 32 1. Device linearity will begin to degrade below 1 MHz. 2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth. 3. Measured in a 50 Ω system. ©2005 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 7 Document No. 70-0097-01 │ www.psemi.com PE4231 Product Specification Figure 3. Pin Configuration (Top View) Table 4. DC Electrical Specifications Parameter Min 2.7 Typ 3.0 29 Max 3.3 35 Units V µA V VDD CTRL 1 2 8 7 RF1 GND VDD Power Supply Voltage IDD Power Supply Current (VDD = 3V, VCNTL = 3V) Control Voltage High 4231 GND 3 4 6 5 GND 0.7xVDD 0.3xVDD Control Voltage Low RFCommon RF2 V Table 2. Pin Descriptions Pin No. 1 2 Table 5. Truth Table Control Voltage Signal Path RFCommon to RF1 RFCommon to RF2 Pin Name VDD CTRL Description Nominal +3 V supply connection. CMOS or TTL logic level: High = RFCommon to RF1 signal path Low = RFCommon to RF2 signal path Ground connection. Traces should be physically short and connected to ground Common RF port for switch.1 RF2 port.1 Ground Connection. Traces should be physically short and connected to ground Ground Connection. Traces should be physically short and connected to ground RF1 port.1 CTRL = CMOS or TTL High CTRL = CMOS or TTL Low 3 GND 4 5 6 RF Common RF2 GND The control logic input pin (CTRL) is typically driven by a 3-volt CMOS logic level signal, and has a threshold of 50% of VDD. For flexibility to support systems that have 5-volt control logic drivers, the control logic input has been designed to handle a 5-volt logic HIGH signal. (A minimal current will be sourced out of the VDD pin when the control logic input voltage level exceeds VDD.) Latch-Up Avoidance 7 GND 8 RF1 Unlike conventional CMOS devices, UltraCMOS™ devices are immune to latch-up. Electrostatic Discharge (ESD) Precautions When handling this UltraCMOS™ device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 3. Note 1: All RF pins must be DC blocked with an external series capacitor or held at 0 VDC. Table 3. Absolute Maximum Ratings Symbol VDD VI VCTRL TST TOP PIN VESD Parameter/ Conditions Power supply voltage Voltage on any input except for the CTRL input Voltage on CTRL input Storage temperature range Operating temperature range Input power (50Ω) ESD voltage (Human Body Model) Min -0.3 -0.3 Max 4.0 VDD+ 0.3 5.0 Units V V V °C °C dBm V -65 -40 150 85 33 200 ©2005 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 7 Document No. 70-0097-01 │ UltraCMOS™ RFIC Solutions PE4231 Product Specification Typical Performance Data @ -40 °C to 85 °C (Unless Otherwise Noted) Figure 4. Insertion Loss – RFC to RF1 Figure 5. Input 1dB Compression Point 40 -40 8C 0 -0.25 1dB Compression Point (dBm) -40 8C Insertion Loss (dB) -0.5 30 85 8C 25 8C -0.75 85 8C -1 25 8C 20 10 -1.25 -1.5 0 200 400 600 800 1000 1200 0 0 200 400 600 800 1000 1200 Frequency (MHz) Frequency (MHz) Figure 6. Insertion Loss – RFC to RF2 Figure 7. Isolation – RFC to RF1 0 0 -0.25 -40 8C Insertion L.


PE4230 PE4231 PE4232


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)