PE4239

Product Description The PE4239 UltraCMOS® RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3V power supply voltage, a typical input 1 dB compression point of +25 dBm can be achieved. The PE4239 UltraCMOS RF switch is manufactured on pSemi’s UltraCMOS process, a patented variation of silicon-oninsulator (SOI) technology on a sapphire substrate, offering the Figure 1. Functional Diagram RFC RF1 RF2 Product Specification PE4239 SPDT UltraCMOS® RF Switch Features  Single-pin or complementary CMOS logic control inputs  +3.0V power supply needed for single- pin control mode  Low insertion loss: 0.7 dB at 1.0 GHz, 0.9 dB at 2.0 GHz  Isolation of 32 dB at 1.0 GHz, 23 dB at 2.0 GHz  Typical input 1 dB compression point of +25 dBm  Ultra-small 6-lead SC-70 package Figure 2. Package Type SC-70 6-lead SC-70 CMOS Control Driver CTRL CTRL or VDD Table 1. Electrical Specifications @ +25 °C, VDD = 3V (ZS = ZL = 50Ω) Parameter Conditions Minimum Operation Frequency1 DC Insertion Loss 1000 MHz 2000 MHz Isolation 1000 MHz 2000 MHz 30 21 Return Loss 1000 MHz 2000 MHz 18 16 ‘ON’ Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz Typical 0.7 0.9 32 23 20 18 300 Maximum 3000 0.85 1.05 Units MHz dB dB dB dB dB dB ns...