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6MBI75UB-120 Dataheets PDF



Part Number 6MBI75UB-120
Manufacturers Fuji Electric
Logo Fuji Electric
Description IGBT Module
Datasheet 6MBI75UB-120 Datasheet6MBI75UB-120 Datasheet (PDF)

www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 6MBI75UB-120 MS5F 5497 Fuji Electric Co.,Ltd. Matsumoto Factory Jun. 18 ’03 Y.Kobayashi Jun. 18 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F 5497 1 13 H04-004-07 Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada T.Fujihira Approved Jun.- 18 -’03 enactment MS5F 5497 2 13 H04-004-06 6MBI75UB-120 1. Outline Drawing ( Unit : mm ) ( 2. Equivalent cir.

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www.DataSheet4U.com SPECIFICATION Device Name Type Name Spec. No. : : : IGBT Module 6MBI75UB-120 MS5F 5497 Fuji Electric Co.,Ltd. Matsumoto Factory Jun. 18 ’03 Y.Kobayashi Jun. 18 ’03 T.Miyasaka T.Fujihira K.Yamada MS5F 5497 1 13 H04-004-07 Revised Records Date Classification Ind. Content Applied date Issued date Drawn Checked T.Miyasaka K.Yamada T.Fujihira Approved Jun.- 18 -’03 enactment MS5F 5497 2 13 H04-004-06 6MBI75UB-120 1. Outline Drawing ( Unit : mm ) ( 2. Equivalent circuit ) shows reference dimension. 30,31,32 16,17,18 19 20 1 2 U 27,28,29 3 4 33,34,35 5 6 9 10 V 24,25,26 W 21,22,23 7 8 11 12 13,14,15 MS5F 5497 3 13 H04-004-03 3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic Collector Power Dissipation Junction temperature Storage temperature Isolation voltage Screw Torque between terminal and copper base *1 between thermistor and others *2 Mounting *3 -Ic pulse Pc Tj Tstg Viso AC : 1min. 1ms 1 device Continuous 1ms Tc=25℃ Tc=80℃ Tc=25℃ Tc=80℃ Conditions Maximum Ratings 1200 ±20 100 75 200 150 75 150 390 150 -40~ +125 2500 3.5 W ℃ VAC N・m A Units V V (*1) All terminals should be connected together when isolation test will be done. (*2) Two termistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5) 4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead R B Conditions VGE = 0V VCE = 1200V VCE = 0V VGE=±20V VCE = 20V Ic = 75mA VGE=15V Ic = 75A Tj= 25℃ Tj=125℃ Tj= 25℃ min. 4.5 - Characteristics typ. max. 6.5 2.05 2.30 1.75 2.00 8 0.36 0.21 0.03 0.37 0.07 1.90 2.00 1.60 1.70 3.4 5000 495 3375 1.0 200 8.5 2.40 2.10 1.20 0.60 1.00 0.30 2.20 1.90 0.35 520 3450 Units mA nA V V Tj=125℃ VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 75A VGE=±15V nF µs Turn-off time Rg = 9.1 Ω Tj= 25℃ Tj=125℃ Tj= 25℃ Tj=125℃ VGE=0V IF = 75A IF = 75A T = 25℃ T =100℃ T = 25/50℃ Forward on voltage 465 3305 V Reverse recovery time Lead resistance, terminal-chip * Thermistor µs mΩ Ω K Resistance B value (*) Biggest internal terminal resistance among arm. MS5F 5497 4 13 H04-004-03 5. Thermal resistance characteristics Items Thermal resistance(1device) Contact Thermal resistance(1device) Symbols Rth(j-c) Rth(c-f) IGBT Conditions FWD with Thermal Compound (※) min. - Characteristics typ. max. 0.05 0.32 0.49 - Units ℃/W ※ This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module 6MBI75UB.


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