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SPECIFICATION
Device Name Type Name Spec. No. :
: :
IGBT Module 6MBI75UB-120 MS5F 5497
Fuji Electric Co.,Ltd. Matsumoto Factory
Jun. 18 ’03 Y.Kobayashi Jun. 18 ’03 T.Miyasaka T.Fujihira K.Yamada
MS5F 5497
1 13
H04-004-07
Revised Records
Date Classification Ind. Content Applied date Issued date Drawn Checked
T.Miyasaka K.Yamada T.Fujihira
Approved
Jun.- 18 -’03
enactment
MS5F 5497
2 13
H04-004-06
6MBI75UB-120
1. Outline Drawing ( Unit : mm )
( 2. Equivalent circuit
) shows reference dimension.
30,31,32
16,17,18
19
20
1 2 U 27,28,29 3 4 33,34,35
5 6
9 10 V 24,25,26 W 21,22,23
7 8
11 12 13,14,15
MS5F 5497
3 13
H04-004-03
3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified )
Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic Collector Power Dissipation Junction temperature Storage temperature Isolation voltage Screw Torque between terminal and copper base *1 between thermistor and others *2 Mounting *3 -Ic pulse Pc Tj Tstg Viso AC : 1min. 1ms 1 device Continuous 1ms Tc=25℃ Tc=80℃ Tc=25℃ Tc=80℃ Conditions Maximum Ratings 1200 ±20 100 75 200 150 75 150 390 150 -40~ +125 2500 3.5 W ℃ VAC N・m A Units V V
(*1) All terminals should be connected together when isolation test will be done. (*2) Two termistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Items
Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time
Symbols
ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead R B
Conditions
VGE = 0V VCE = 1200V VCE = 0V VGE=±20V VCE = 20V Ic = 75mA VGE=15V Ic = 75A Tj= 25℃ Tj=125℃ Tj= 25℃
min.
4.5 -
Characteristics typ. max.
6.5 2.05 2.30 1.75 2.00 8 0.36 0.21 0.03 0.37 0.07 1.90 2.00 1.60 1.70 3.4 5000 495 3375 1.0 200 8.5 2.40 2.10 1.20 0.60 1.00 0.30 2.20 1.90 0.35 520 3450
Units
mA nA V
V
Tj=125℃ VCE=10V,VGE=0V,f=1MHz Vcc = 600V Ic = 75A VGE=±15V
nF
µs
Turn-off time
Rg = 9.1 Ω Tj= 25℃ Tj=125℃ Tj= 25℃ Tj=125℃
VGE=0V IF = 75A IF = 75A T = 25℃ T =100℃ T = 25/50℃
Forward on voltage
465 3305
V
Reverse recovery time Lead resistance, terminal-chip *
Thermistor
µs mΩ Ω K
Resistance B value
(*)
Biggest internal terminal resistance among arm.
MS5F 5497
4 13
H04-004-03
5. Thermal resistance characteristics Items
Thermal resistance(1device) Contact Thermal resistance(1device)
Symbols
Rth(j-c) Rth(c-f) IGBT
Conditions
FWD with Thermal Compound (※)
min.
-
Characteristics typ. max.
0.05 0.32 0.49 -
Units
℃/W
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
6MBI75UB.