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FQB58N08 Dataheets PDF



Part Number FQB58N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FQB58N08 DatasheetFQB58N08 Datasheet (PDF)

www.DataSheet4U.com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low volt.

  FQB58N08   FQB58N08


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www.DataSheet4U.com FQB58N08 / FQI58N08 December 2000 QFET FQB58N08 / FQI58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. D TM Features • • • • • • • 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB58N08 / FQI58N08 80 57.5 40.6 230 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 560 57.5 14.6 6.5 3.75 146 0.97 -55 to +175 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.03 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQB58N08 / FQI58N08 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VDS = 64 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 80 ------0.07 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 28.75 A VDS = 30 V, ID = 28.75 A (Note 4) 2.0 --- -0.018 33 4.0 0.024 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1450 520 120 1900 680 155 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 64 V, ID = 57.5 A, VGS = 10 V (Note 4, 5) VDD = 40 V, ID = 57.5 A, RG = 25 Ω (Note 4, 5) -------- 16.5 200 70 95 50 9.3 25 45 410 150 200 65 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 57.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 57.5 A, dIF / dt = 100 A/µs (Note 4) ------ ---73 185 57.5 230 1.5 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.23mH, IAS = 57.5A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 57.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQB58N08 / FQI58N08 Typical Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 2 10 1 175℃ 10 1 25℃ 10 0 -55℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 0 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 10 2 RDS(ON) [mΩ ], Drain-Source On-Resistance 80 60 VGS = 20V 40 IDR , Reverse Drain Current [A] VGS = 10V 10 1 10 0 20 ※ Note : TJ = 25℃ 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 0 50 100 150 200 250 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resis.


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