Ultrahigh-Speed Switching Applications
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Ordering number : ENN7003
FTS1011
P-Channel Silicon MOSFET
FTS1011
Ultrahigh-Speed Switching Appl...
Description
www.DataSheet4U.com
Ordering number : ENN7003
FTS1011
P-Channel Silicon MOSFET
FTS1011
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm 2147A
[FTS1011]
0.65
0.95
Low ON-resistance. 2.5V drive. Mounting height 1.1mm.
3.0
0.425
8
5
0.5 4.5 6.4
1
0.25
4
(0.95)
1 : Drain 2 : Source 3 : Source 0.125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.1
1.0
Ratings -20 ± 10 --6 -30 1.3 150 --55 to +150
Unit V V A A W °C °C
Mounted on a ceramic board (1000mm2!0.8mm)
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--6A Ratings min --20 --1 ± 10 --0.4 10.5 15 --1.4 typ max Unit V µA µA V S
Marking : S1011
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applicatio...
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