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FZ400R65KF1 Dataheets PDF



Part Number FZ400R65KF1
Manufacturers eupec GmbH
Logo eupec GmbH
Description IGBT-Module
Datasheet FZ400R65KF1 DatasheetFZ400R65KF1 Datasheet (PDF)

www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom.

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www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage tP = 1 ms Tvj=125°C Tvj=25°C Tvj=-40°C TC = 80 °C TC = 25 °C tP = 1 ms, T C = 80°C VCES IC,nom. IC ICRM 6500 6300 5800 400 800 800 V A A A TC=25°C, Transistor Ptot 7,4 kW VGES +/- 20V V IF 400 A IFRM 800 A VR = 0V, tp = 10ms, T vj = 125°C I2t 87 k A2s RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 400A, VGE = 15V, Tvj = 25°C IC = 400A, VGE = 15V, Tvj = 125°C IC = 70mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min. 6,4 typ. 4,3 5,3 7,0 max. 4,9 5,9 8,1 V V V VGE = -15V ... +15V QG - 5,6 - µC f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C Cies - 56 0,4 40 - - nF mA mA nA ICES - - IGES - 400 prepared by: Dr. Oliver Schilling approved by: Dr. Schütze 2002-07-05 date of publication: 2002-07-05 revision/Status: Series 1 1 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip IC = 400A, VCE = 3600V, VGE = ±15V RGon = 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH IC = 400A, VCE = 3600V, VGE = ±15V RGoff = 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05 TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt ISC LsCE 2000 20 A nH Eoff 2300 mJ Eon 4000 mJ tf 0,40 0,50 µs µs td,off 5,50 6,00 µs µs tr 0,37 0,40 µs µs td,on 0,75 0,72 µs µs min. typ. max. RCC´+EE´ - 0,18 - mΩ Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 400A, VGE = 0V, Tvj = 25°C IF = 400A, VGE = 0V, Tvj = 125°C IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Erec Qr IRM VF min. 3,0 typ. 3,8 3,9 max. 4,6 4,7 V V - 540 660 - A A - 360 700 - µC µC - 440 1050 - mJ mJ 2 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K Rth.


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