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HE7601SG

Hitachi

GaAlAs Infrared Emitting Diode


Description
www.DataSheet4U.com HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features High efficiency and high output power Package Type HE7601SG: SG1...



Hitachi

HE7601SG

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