GaAlAs Infrared Emitting Diode
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HE7601SG
GaAlAs Infrared Emitting Diode
ODE-208-996B (Z) Rev.2 Mar. 2005 Description
The HE7601SG ...
Description
www.DataSheet4U.com
HE7601SG
GaAlAs Infrared Emitting Diode
ODE-208-996B (Z) Rev.2 Mar. 2005 Description
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
Features
High efficiency and high output power
Package Type HE7601SG: SG1 Internal Circuit
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HE7601SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 30 740 — — — — — — Typ — 770 50 — — 30 10 10 Max — 800 60 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA
Rev.2, Mar. 2005, page 2 of 6
HE7601SG
Typical Characteristic Curves
Optical Output Power vs. Forward Current 50
Optical output power, PO (mW)
Forward Current vs. Forward Voltage 250
Forward current, IF (mA)
TC = −20°C 40 25°C 30 20 10 60°C 0 0 50 100 150 200 250 Forward current, IF (mA) 0°C 40°C
200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 Forward voltage, VF (V) TC = −20°C 25°C 60°C
Spectral Distribution
Relative radiation intensity (%)
Pulse Response Current pulse TC = 25°C
Relative int...
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