HE8811

www.DataSheet4U.com HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment. Features High-frequency response High efficiency and high output power Broad radiation pattern Package Type HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3 –20 to +60 –40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 20 780 — — — — — — Typ 30 820 50 — — 10 5 7 Max — 900 — 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 150 mA IF = 150 mA IF = 150 mA IF = 150 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA Rev.2, Mar. 2005, page 2 of 6 HE8811 Typical Characteristic Curves Optical Output Power vs. Forward Current 40 Optical output power, PO (mW) Forward current, IF (mA) Forward Current vs. Forward Voltage 200 −2 0 30 T °C C 25 = °C 60 °C 150 TC = 0°C 100 25°C −20°C 50 20 10 0 50 100 150 Forward current, IF (mA) 200 0 0 2.5 0.5 1.0 1.5 2.0 Forward voltage, VF (V) ...