GaAlAs Infrared Emitting Diode
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HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-1000A (Z) Rev.1 Jan. 2003 Description
The HE8812SG...
Description
www.DataSheet4U.com
HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-1000A (Z) Rev.1 Jan. 2003 Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
High efficiency and high output power
Package Type HE8812: SG1 Internal Circuit
1
2
HE8812SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise time Fall time Symbol PO λp ∆λ VF IR Ct tr tf Min 40 840 — — — — — — Typ — 870 50 — — 30 10 10 Max — 900 60 2.5 100 — — — Unit mW nm nm V µA pF ns ns Test Conditions IF = 200 mA IF = 200 mA IF = 200 mA IF = 200 mA VR = 3 V VR = 0 V, f = 1 MHz IF = 50 mA IF = 50 mA
Rev.1, Jan. 2003, page 2 of 6
HE8812SG
Typical Characteristic Curves
Optical Output Power vs. Forward Current
Optical output power, PO (mW)
Forward Current vs. Forward Voltage 250
Forward current, IF (mA)
60 50 40 30 20 10 0 0 50 100 150 200 250
TC = −20°C 0°C 25°C 40°C 60°C
200 150
TC = −20°C
100 50
25°C 60°C
0
Forward current, IF (mA)
0.5 1.0 1.5 2.0 Forward voltage, VF (V)
2.5
Spectral Distribution 100
Relative radiation intensity (%)
Pulse Response Current p...
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