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PD - 94211A
IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
™ ®
4 # TECHNOLOGY
IRHQ58110 1000K Rads (Si)
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 4.6 2.9 18.4 12 0.1 ±20 47 4.6 1.2 6.1 -55 to 150 300 (for 5s) 0.89 (Typical)
Pre-Irradiation
Units A
W
W/°C
V mJ A mJ V/ns
o
C
g
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08/01/01
IRHQ57110
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 — — — 2.0 3.3 — — — — — — — — — — — —
Typ Max Units
— 0.13 — — — — — — — — — — — — — — — 6.1 — — 0.31 0.27 4.0 — 10 25 100 -100 13 4.0 3.9 20 24 32 90 — V V/°C Ω V S( ) µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 4.6A ➃ VGS = 12V, ID = 2.9A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 2.9A ➃ VDS= 80V, VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 4.6A VDS = 50V VDD = 50V, ID = 4.6A, VGS = 12V, RG = 7.5Ω
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off .