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IRHQ3110 Dataheets PDF



Part Number IRHQ3110
Manufacturers International Rectifier
Logo International Rectifier
Description (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Datasheet IRHQ3110 DatasheetIRHQ3110 Datasheet (PDF)

www.DataSheet4U.com PD - 93785A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 IRHQ4110 IRHQ8110 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) TM IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® RDS(on) 0.6Ω 0.6Ω 0.6Ω 0.75Ω ID 3.0A 3.0A 3.0A 3.0A LCC-28 International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over .

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www.DataSheet4U.com PD - 93785A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 IRHQ4110 IRHQ8110 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) TM IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® RDS(on) 0.6Ω 0.6Ω 0.6Ω 0.75Ω ID 3.0A 3.0A 3.0A 3.0A LCC-28 International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® MOSFET Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 3.0 1.9 12 12 0.1 ±20 85 3.0 1.2 3.0 -55 to 150 300 (for 5s) 0.89 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/27/00 IRHQ7110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 100 — — — 2.0 1.4 — — — — — — — — — — — — Typ Max Units — 0.11 — — — — — — — — — — — — — — — 6.1 — — 0.62 0.60 4.0 — 25 250 100 -100 11 4.0 5.5 13 16 23 15 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 3.0A ➃ VGS = 12V, ID = 1.9A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 1.9A ➃ VDS= 80V, VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 3.0A VDS = 50V VDD = 50V, ID = 3.0A, VGS = 12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 270 110 23 — — — pF Source-Drain Diode Ratings and Characteristics (Per Die) Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 3.0 12 1.2 173 863 Test Conditions A V nS nC Tj = 25°C, IS = 3.0A, VGS = 0V ➃ Tj = 25°C, IF = 3.0A, di/dt ≥ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance (Per Die) Parameter RthJC Junction-to-Case Min Typ Max Units — — 10.4 °C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHQ7110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ (Per Die) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-39) Static Drain-to-Source ➃ On-State Resistance (LCC-28) Diode Forward Voltage ➃ 100K Rads(Si)1 300K to 1000K Rads (Si)2 .


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