IRHQ4110

www.DataSheet4U.com PD - 93785A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 IRHQ4110 IRHQ8110 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) TM IRHQ7110 100V, QUAD N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® RDS(on) 0.6Ω 0.6Ω 0.6Ω 0.75Ω ID 3.0A 3.0A 3.0A 3.0A LCC-28 International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET® MOSFET Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating ...