MASWSS0181

www.DataSheet4U.com RoHS Compliant MASWSS0181 V2 Functional Schematic PIN 1 PIN 6 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Features Low Voltage Operation: 2.5 V Harmonics: <-67 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.40 dB at 1 GHz High Isolation: 20 dB at 2 GHz 0.5 micron GaAs PHEMT Process Lead-Free SOT-26 Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Reflow Compatible RoHS* Compliant Version of MASWSS0006 RF1 V1 RFC 39 pF 1 00 pF V2 100pF 39 pF GND RF2 1 00 39 pF pF Description M/A-COM’s MASWSS0181 is a GaAs PHEMT MMIC single pole two throw (SPDT) high power switch in a lead-free SOT-26 package. The MASWSS0181 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0181 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Pin Configuration Pin No. 1 2 3 4 5 6 Pin Name RF1 GND RF2 V2 RFC V1 Description RF Port 1 RF Ground RF Port 2 Control 2 RF Common Port Control 1 Absolute Maximum Ratings 1,2 Parameter Input Power (...