DatasheetsPDF.com

SPN2304 Dataheets PDF



Part Number SPN2304
Manufacturers SYNC
Logo SYNC
Description N-Channel MOSFET
Datasheet SPN2304 DatasheetSPN2304 Datasheet (PDF)

SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small.

  SPN2304   SPN2304



Document
SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  30V/3.2A,RDS(ON)=65mΩ@VGS=10V  30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/17 Ver.6 Page 1 SPN2304 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2304S23RGB SOT-23-3L ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2304S23RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking 04 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 30 ±20 3.2 2.6 10 1.25 1.25 0.8 150 -55/150 100 Unit V V A A A W ℃ ℃ ℃/W 2020/02/17 Ver.6 Page 2 SPN2304 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V IDSS ID(on) RDS(on) gfs VDS=30V,VGS=1.0V VDS=30V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=10V VDS≧4.5V,VGS=4.5V VGS = 10V,ID=3.2A VGS =4.5V,ID=2.0A VDS=4.5V,ID=2.5A VSD IS=1.25A,VGS=0V Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=15VGS=10V ID≡2.5 VDS=15VGS=0V f=1MHz VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω Min. Typ Max. Unit 30 V 1.0 3.0 ±100 nA 1 uA 10 6 4 A 0.050 0.065 0.065 0.090 Ω 4.6 S 0.82 1.2 V 4.5 10 0.8 nC 1.0 240 110 pF 17 8 20 12 30 nS 17 35 8 20 2020/02/17 Ver.6 Page 3 SPN2304 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2020/02/17 Ver.6 Page 4 SPN2304 N-Channel .


SMD-3500 SPN2304 SPN3414


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)