Document
SPN2304
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES 30V/3.2A,RDS(ON)=65mΩ@VGS=10V 30V/2.0A,RDS(ON)=90mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
2020/02/17 Ver.6
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SPN2304
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN2304S23RGB
SOT-23-3L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN2304S23RGB : Tape Reel ; Pb – Free ; Halogen - Free
Part Marking 04
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
Symbol VDSS VGSS ID
IDM IS
PD TJ TSTG RθJA
Typical 30
±20 3.2 2.6 10
1.25 1.25 0.8 150 -55/150 100
Unit V V A
A A
W ℃ ℃ ℃/W
2020/02/17 Ver.6
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SPN2304
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
ID(on) RDS(on)
gfs
VDS=30V,VGS=1.0V VDS=30V,VGS=0.0V TJ=55℃ VDS≧4.5V,VGS=10V VDS≧4.5V,VGS=4.5V VGS = 10V,ID=3.2A VGS =4.5V,ID=2.0A
VDS=4.5V,ID=2.5A
VSD IS=1.25A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=15VGS=10V ID≡2.5
VDS=15VGS=0V f=1MHz
VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω
Min. Typ Max. Unit
30
V
1.0
3.0
±100 nA
1 uA
10
6
4
A
0.050 0.065 0.065 0.090
Ω
4.6
S
0.82 1.2 V
4.5
10
0.8
nC
1.0
240
110
pF
17
8
20
12
30
nS
17
35
8
20
2020/02/17 Ver.6
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SPN2304
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/02/17 Ver.6
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SPN2304
N-Channel .