STC03DE170HV

www.DataSheet4U.com STC03DE170HV HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT™ 1700 V - 3 A - 0.55 W Table 1: General Features VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.55 W IC 1.8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7 W 23 4 APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HV is designed for use in aux flyback smps for any three phase application. 1 TO247-4L HV Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC03DE170HV Marking C03DE170HV Package TO247-4L HV Device Structure Packaging TUBE January 2005 Rev. 1 1/9 STC03DE170HV Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1700 30 9 ± 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W °C °C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 1 Unit o C/W ...