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HLX6228 Datasheet, Equivalent, Power SOI.128K x 8 STATIC RAM-Low Power SOI 128K x 8 STATIC RAM-Low Power SOI |
　
　
　
| Part | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Pr oducts HLX6228 128K x 8 STATIC RAM— Low Power SOI FEATURES RADIATION • Fa bricated with RICMOSâ„¢ IV Silicon on I nsulator (SOI) 0. 7 µm Low Power Proces s (Leff = 0. 55 µm) • Total Dose Hard ness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynami c and Static Transient Upset Hardness t hrough 1x109 rad(Si)/s • Dose Rate Su rvivability through 1x1011 rad(Si)/s †¢ Soft Error Rate of <1x10-10 Upsets/bi t-day in Geosynchronous Orbit • No La tchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical O perating Power <9 mW/MHz • JEDEC Stan dard . |
| Manufacture | Honeywell |
| Datasheet |
| Part | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Pr oducts HLX6228 128K x 8 STATIC RAM— Low Power SOI FEATURES RADIATION • Fa bricated with RICMOSâ„¢ IV Silicon on I nsulator (SOI) 0. 7 µm Low Power Proces s (Leff = 0. 55 µm) • Total Dose Hard ness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynami c and Static Transient Upset Hardness t hrough 1x109 rad(Si)/s • Dose Rate Su rvivability through 1x1011 rad(Si)/s †¢ Soft Error Rate of <1x10-10 Upsets/bi t-day in Geosynchronous Orbit • No La tchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical O perating Power <9 mW/MHz • JEDEC Stan dard . |
| Manufacture | Honeywell |
| Datasheet |
　
　
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