Non-Volatile SRAM MODULE 32Mbit
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HMN4M8DV(N)
Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V
Part No. HMN...
Description
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HANBit
HMN4M8DV(N)
Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V
Part No. HMN4M8DV(N)
GENERAL DESCRIPTION
The HMN4M8DV Nonvolatile SRAM is a 33,554,432-bit static RAM organized as 4,194,304 bytes by 8 bits. The HMN4M8DV has a self-contained lithium energy source provide reliable non -volatility coupled with the unlimited write cycles of standard SRAM and integral control circuitry which constantly monitors the single 3.3V supply for an out-oftolerance condition. When such a condition occurs, the lithium energy source is automatically switched on to sustain the memory until after V CC returns valid and write protection is unconditionally enabled to prevent garbled data. In addition the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain t he memory until after V CC returns valid. The HMN4M8DV uses extremely low standby current CMOS SRAM ’s, coupled with small lithium coin cells to provide non volatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 55, 70ns w High-density design : 32Mbit Design w Battery internally isolated until power is applied w Industry-standard 40-pin 4,096K x 8 pinout w Unlimited write cycles w Data retention in the absence of VCC w 5-years minimum data retention in absence of power w Automatic write-protection during power-up/power-down cycles w Dat...
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