(IS25C128 / IS25C256) 128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
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IS25C128 IS25C256
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
ISSI
Advanced Informati...
Description
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IS25C128 IS25C256
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM
ISSI
Advanced Information JULY 2006
®
FEATURES
Serial Peripheral Interface (SPI) Compatible — Supports SPI Modes 0 (0,0) and 3 (1,1) Low power CMOS — Active current less than 3.0 mA (2.5V) — Standby current less than 20 µA (2.5V) Low-voltage Operation — Vcc = 1.8V to 5.5V Block Write Protection — Protect 1/4, 1/2, or Entire Array 64 byte page write mode — Partial page writes allowed 2.1 MHz Clock Rate (5V) Self timed write cycles — 5ms max @ 2.5V High-reliability — Endurance: 1,000,000 cycles per byte — Data retention: 100 years 8-pin JEDEC SOIC, 8-pin EIAJ SOIC, and 8-pin PDIP packages available Industrial and Automotive temperature ranges Lead-free available
DESCRIPTION
The IS25C128 and IS25C256 are electrically erasable PROM devices that use the Serial Peripheral Interface (SPI) for communications. The IS25C128 is 128Kbit (16K x 8) and the IS25C256 is 256Kbit (32K x 8). The IS25C128/256 EEPROMs are offered in a wide operating voltage range of 1.8V to 5.5V for compatibility with most application voltages. ISSI designed the IS25C128/256 to be an efficient SPI EEPROM solution. The devices are packaged in 8-pin JEDEC SOIC, 8-pin EIAJ SOIC, and 8-pin PDIP. The functional features of the IS25C128/256 allow them to be among the most advanced serial non-volatile memories available. Each device has a Chip-Select (CS) pin, and a 3-wire interface of Serial Data In...
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