Transimpedance Amplifier. ADN2882 Datasheet

ADN2882 Amplifier. Datasheet pdf. Equivalent


Analog Devices ADN2882
www.DataSheet4U.com
Preliminary Technical Data
FEATURES
Technology: high performance SiGe
Bandwidth: 3.2 GHz minimum
Input noise current density: 10 pA√Hz
Optical sensitivity: −22 dBm
Differential transimpedance: 4000 V/A
Power dissipation: 75 mW
Differential output swing: 250 mV p-p
Input current overload: +3.25 dBm
Output resistance: 50 Ω side
RSSI voltage and current ratio: 0.8V/mA
Low-freq cutoff: 15 kHz
On-chip PD filter: RF = 200 Ω CF = 20 pF
Die size: 0.7 mm × 1.2 mm
APPLICATIONS
4.25 Gbps optical modules
SFF-8472 compliant receivers
PIN/APD-TIA receive optical subassembly
SONET/GbE/FC optical receivers, transceivers, transponders
4.25 Gbps 3.3V Low Noise
Transimpedance Amplifier
ADN2882
PRODUCT DESCRIPTION
The ADN2882 is a compact, high performance 3.3 V power
supply SiGe transimpedance amplifier (TIA) optimized for
small form factor 4.25 Gbps metro-access, Ethernet PIN/APD-
TIA modules and 1×/2×/4× Fibre channel receiver applications
and meets OC48 SR/IR sensitivity requirements. The ADN2882
is a single-chip solution for detecting photodiode current with a
differential output voltage. The ADN2882 features low input
referred noise current of 600 nA enabling −22 dBm sensitivity;
3.2 GHz minimum bandwidth enables up to 4.25 Gbps
operation; +3.25 dBm nominal operation at 10dB extinction
ratio. RSSI output signal proportional to average input current
is available for monitoring and alarm generation. To facilitate
assembly in small form factor packages such as a TO-46 or TO-
56 header, the ADN2882 integrates the photodiode filter
network on chip and features 15 kHz low frequency cutoff
without any external components. The ADN2882 chip area is
less than 1 mm2, operates with a 3.3 V power supply and is
available in die form.
FUNCTIONAL BLOCK DIAGRAM
3.3V
FILT ER
IN
VCC_FI LT ER
VCC
200
110050
50
OU T
OU T B
20pF
0.85V
GND
5mA
GND
CAP
RSSI
Figure 1. ADN2882 Block Diagram
Rev. PrD November 04 2004
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.


ADN2882 Datasheet
Recommendation ADN2882 Datasheet
Part ADN2882
Description Low Noise Transimpedance Amplifier
Feature ADN2882; www.DataSheet4U.com Preliminary Technical Data FEATURES Technology: high performance SiGe Bandwidth.
Manufacture Analog Devices
Datasheet
Download ADN2882 Datasheet




Analog Devices ADN2882
ADN2882
TABLE OF CONTENTS
Electrical Specifications ................................................................... 3
Absolute Maximum Ratings............................................................ 4
ESD Caution.................................................................................. 4
Pad Description ................................................................................ 5
REVISION HISTORY
07/04—Revision PrB July 27 2004
09/04 - Revision PrC Sept 30 2004: spec changes
11/04 – Revision PrD: RSSI added in
Preliminary Technical Data
Pad Layout ..........................................................................................6
Pad Coordinates ............................................................................6
Die Information.............................................................................6
Assembly Recommendations...........................................................7
Rev. PrD Nov. 04 2004 | Page 2 of 10



Analog Devices ADN2882
Preliminary Technical Data
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
Conditions1
DYNAMIC PERFORMANCE
Bandwidth (BW)2
Total Input RMS Noise (IRMS)2
Small Signal Transimpedance (ZT)
Low Frequency Cutoff
Output Return Loss
Input Overload Current3
Maximum Output Swing
Output Data Transition Time
PSRR
−3 dB
DC to 4.0 GHz
100MHz
IIN = 10µA
IIN = 500µA
DC to 4.25GHz, differential
Pavg
pk-pk diff, IIN,PK- PK = 2.0 mA
20% to 80% rise/fall time IIN,PK- PK = 2.5 mA
<10 MHz
Group Delay Variation
50 MHz to 1.0 GHz
Transimpedance Ripple
Total Jitter
Deterministic Jitter
Linear Output Range
50 MHz to 1.0 GHz
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
Pk-pk, < 1dB compression
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common Mode Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
IIN,AVE = 0
DC terminated to VCC
Single-ended
RF
CF
IIN, AVE = 0 uA to 1 mA
IIN, AVE = 0 uA
Min
3.3
2800
TBD
180
50
ADN2882
Typ
3.8
520
3800
15
TBD
−20
3.25
250
40
−40
TBD
TBD
TBD
TBD
2
4
TBD
Max
TBD
4800
−12
350
TBD
TBD
Unit
GHz
nA
V/A
kHz
kHz
dB
dBm
mV
ps
dB
ps
dB
ps
ps
ps
Ps
mV
75
0.85
Vcc − 0.12
50
200
20
0.8
TBD
120
mW
V
V
pF
V/mA
mV
1 Min/Max VCC = +3.3 V ± 0.3 V, Ta = −40°C to +95°C; Typ VCC = 3.3 V, Ta = +25C.
2 Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3 10–10 BER, 10 dB ER,
Rev. PrD Nov. 04 2004 | Page 3 of 10





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)