Document
60V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP6A13F
SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package
APPLICATIONS • DC - DC converters • Power management functions • Relay and solenoid driving • Motor control
ORDERING INFORMATION
DEVICE
ZXMP6A13FTA ZXMP6A13FTC
REEL SIZE
7”
13”
TAPE QUANTITY WIDTH PER REEL
8mm 3000 units
8mm 10000 units
DEVICE MARKING • 7P6
SOT23
PINOUT
Top View
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ZXMP6A13F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous
Drain
Current
VGS=10V; VGS=10V; VGS=10V;
TA=25°C TA=70°C TA=25°C
(b) (b) (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at TA=25°C (a) Linear Derating Factor
Power Dissipation at TA=25°C (b) Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL VDSS VGS ID
IDM IS ISM PD
PD
Tj:Tstg
LIMIT
-60
20
-1.1 -0.8 -0.9
-4.0
-1.2
-4.0
625 5
806 6.5
-55 to +150
UNIT V V A
A A A mW mW/°C mW mW/°C °C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b)
SYMBOL RθJA RθJA
VALUE 200 155
UNIT °C/W °C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ≤5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
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CHARACTERISTICS
ZXMP6A13F
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ZXMP6A13F
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance (1) RDS(on)
Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge
gfs
Ciss Coss Crss
td(on) tr td(off) tf Qg
Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1)
Reverse Recovery Time (3) Reverse Recovery Charge (3)
Qg Qgs Qgd
VSD
trr Qrr
MIN. TYP. MAX. UNIT CONDITIONS
-60 V ID=-250A, VGS=0V
-1 A VDS=-60V, VGS=0V
100 nA VGS=Ϯ20V, VDS=0V
-1.0
V
I
=-250
D
A,
VDS=
VGS
0.400 ⍀ VGS=-10V, ID=-0.9A 0.600 ⍀ VGS=-4.5V, ID=-0.8A
1.8 S VDS=-15V,ID=-0.9A
219 25.7 20.5
pF VDS=-30V, VGS=0V,
pF f=1MHz
pF
1.6 2.2 11.2 5.7 3.2
5.9 0.74 1.5
ns
ns VDD =-30V, ID=-1A ns RG≅6.0⍀, VGS=-10V
ns
nC VDS=-30V,VGS=-5V, ID=-0.9A
nC
nC
VDS=-30V,VGS=-10V, ID=-0.9A
nC
-0.85 -0.95
21.1 19.3
V TJ=25°C, IS=-0.8A, VGS=0V
ns TJ=25°C, IF=-0.9A, di/dt= 100A/μs
nC
NOTES: (1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
ZXMP6A13F
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ZXMP6A13F
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ZXMP6A13F
Definitions
Product change
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Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
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A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body or 2. support or sustain life and whose failure to perform whe.