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ZXMP6A13F Dataheets PDF



Part Number ZXMP6A13F
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description 60V P-CHANNEL MOSFET
Datasheet ZXMP6A13F DatasheetZXMP6A13F Datasheet (PDF)

60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A13F SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters .

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60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A13F SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Relay and solenoid driving • Motor control ORDERING INFORMATION DEVICE ZXMP6A13FTA ZXMP6A13FTC REEL SIZE 7” 13” TAPE QUANTITY WIDTH PER REEL 8mm 3000 units 8mm 10000 units DEVICE MARKING • 7P6 SOT23 PINOUT Top View ISSUE 3 - MAY 2007 1 ZXMP6A13F ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current VGS=10V; VGS=10V; VGS=10V; TA=25°C TA=70°C TA=25°C (b) (b) (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25°C (a) Linear Derating Factor Power Dissipation at TA=25°C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT -60 20 -1.1 -0.8 -0.9 -4.0 -1.2 -4.0 625 5 806 6.5 -55 to +150 UNIT V V A A A A mW mW/°C mW mW/°C °C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL RθJA RθJA VALUE 200 155 UNIT °C/W °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t ≤5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature. ISSUE 3 - MAY 2007 2 CHARACTERISTICS ZXMP6A13F ISSUE 3 - MAY 2007 3 ZXMP6A13F ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL STATIC Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate-Source Threshold Voltage VGS(th) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge gfs Ciss Coss Crss td(on) tr td(off) tf Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) Qg Qgs Qgd VSD trr Qrr MIN. TYP. MAX. UNIT CONDITIONS -60 V ID=-250␮A, VGS=0V -1 ␮A VDS=-60V, VGS=0V 100 nA VGS=Ϯ20V, VDS=0V -1.0 V I =-250 D ␮A, VDS= VGS 0.400 ⍀ VGS=-10V, ID=-0.9A 0.600 ⍀ VGS=-4.5V, ID=-0.8A 1.8 S VDS=-15V,ID=-0.9A 219 25.7 20.5 pF VDS=-30V, VGS=0V, pF f=1MHz pF 1.6 2.2 11.2 5.7 3.2 5.9 0.74 1.5 ns ns VDD =-30V, ID=-1A ns RG≅6.0⍀, VGS=-10V ns nC VDS=-30V,VGS=-5V, ID=-0.9A nC nC VDS=-30V,VGS=-10V, ID=-0.9A nC -0.85 -0.95 21.1 19.3 V TJ=25°C, IS=-0.8A, VGS=0V ns TJ=25°C, IF=-0.9A, di/dt= 100A/μs nC NOTES: (1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 3 - MAY 2007 4 TYPICAL CHARACTERISTICS ZXMP6A13F ISSUE 3 - MAY 2007 5 ZXMP6A13F ISSUE 3 - MAY 2007 6 ZXMP6A13F Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user's application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform whe.


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