ZXMP6A17E6

www.DataSheet4U.com ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP6A17E6 SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ID = -3.0A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package SOT23-6 APPLICATIONS DC - DC Converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXMP6A17E6TA ZXMP6A17E6TC REEL SIZE 7” 13” TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units PINOUT DEVICE MARKING 617 Top View PROVISIONAL ISSUE B - MARCH 2005 1 ZXMP6A17E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) SYMBOL V DSS V GS ID ADVANCE INFORMATION LIMIT -60 20 -3.0 -2.4 -2.3 -13.6 -2.5 -13.6 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25°C Linear Derating Factor (a) (c) (b) I DM IS I SM PD PD T j :T stg A A A W mW/°C W mW/°C °C Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range THERMAL RESISTANCE PARAMETER Junction to...