P-Channel MOSFET
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ZXMP6A17G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -60V: RDS(on) = 0.125 : ID = -4...
Description
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ZXMP6A17G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -60V: RDS(on) = 0.125 : ID = -4.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SOT223
FEATURES
· Low on-resistance · Fast switching speed · Low threshold · Low gate drive · SOT223 package
APPLICATIONS
· DC-DC converters · Power management functions · Relay and solenoid driving · Motor control
PINOUT
ORDERING INFORMATION
DEVICE ZXMP6A17GTA ZXMP6A17GTC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING
· ZXMP 6A17
Top View
ISSUE 1 - MAY 2005 1
SEMICONDUCTORS
ZXMP6A17G
ABSOLUTE MAXIMUM RATING
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; (V GS = -10V; (V GS = -10V; T A =25°C) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25°C Linear Derating Factor
(a) (c) (b)
SYMBOL V DSS V GS T A =25°C) (b) T A =70°C) (b) (a) ID
LIMIT -60 Ϯ 20 -4.1 -3.3 -3.0 -13.7 -4.8 -13.7 2.0 16 3.9 31 -55 to +150
UNIT V V A
I DM IS I SM PD PD T j :T stg
A A A W mW/°C W mW/°C °C
Power Dissipation at T A =25°C (b) Linear Derating Factor Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER Junction to Ambient Junction to Amb...
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