ZXMP6A18DN8

www.DataSheet4U.com ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package SO8 APPLICATIONS Motor drive Disconnect switches ORDERING INFORMATION DEVICE ZXMP6A18DN8TA ZXMP6A18DN8TC REEL 7’‘ 13’‘ TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMP 6A18 Top view ISSUE 1 - MAY 2005 1 ZXMP6A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(d) @V GS =10V; T A =70 Њ C (b)(d) @V GS =10V; T A =25 Њ C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Power Dissipation at TA=25°C (a)(e) Linear Derating Factor Power Dissipation at TA=25°C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID LIMIT -60 Ϯ20 -4.8 -3.8 -3.7 -23 -3.3 -23 1.25 10 1.8 14 2.1 17 -55 to +150 UNIT V V A A A A A A W mW/°C W mW/°C W mW/°C °C I DM IS I SM PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to ...