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2SB0819 Datasheet, Equivalent, type Transistor.Silicon PNP epitaxial planar type Transistor Silicon PNP epitaxial planar type Transistor |
| Part | 2SB0819 |
|---|---|
| Description | Silicon PNP epitaxial planar type Transistor |
| Feature | www. DataSheet4U. com Transistors 2SB081 9 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplific ation Complementary to 2SD1051 (0. 4) U nit: mm 6. 9±0. 1 (1. 5) (1. 5) 3. 5±0. 1 2. 5±0. 1 (1. 0) (1. 0) 2. 0±0. 2 2. 4±0. 2 1. 0±0. 1 Parameter Collector-base vol tage (Emitter open) Collector-emitter v oltage (Base open) Emitter-base voltage (Collector open) Collector current Pea k collector current Collector power dis sipation Junction temperature Storage t emperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1. 5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2. 5) 2 (2. 5 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | 2SB0819 |
|---|---|
| Description | Silicon PNP epitaxial planar type Transistor |
| Feature | www. DataSheet4U. com Transistors 2SB081 9 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplific ation Complementary to 2SD1051 (0. 4) U nit: mm 6. 9±0. 1 (1. 5) (1. 5) 3. 5±0. 1 2. 5±0. 1 (1. 0) (1. 0) 2. 0±0. 2 2. 4±0. 2 1. 0±0. 1 Parameter Collector-base vol tage (Emitter open) Collector-emitter v oltage (Base open) Emitter-base voltage (Collector open) Collector current Pea k collector current Collector power dis sipation Junction temperature Storage t emperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1. 5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2. 5) 2 (2. 5 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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