2SB0819

www.DataSheet4U.com Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 (0.4) Unit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C (0.85) 0.55±0.1 0.45±0.05 1: Base 2: Collector 3: Emitter M-A1 Package Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion cm2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) *1 Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Conditions IC = −1 mA, IE = 0 IC = −2 mA, IB = 0 VCB = −20 V, IE = 0 VCE = −10 V, IB = 0 VEB = −5 V, IC = 0 VCE = −5 V...