2SB0819 Transistor Datasheet

2SB0819 Datasheet, PDF, Equivalent


Part Number

2SB0819

Description

Silicon PNP epitaxial planar type Transistor

Manufacture

Panasonic Semiconductor

Total Page 4 Pages
Datasheet
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2SB0819
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Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1051
Features
High collector-emitter voltage (Base open) VCEO
Large collctor power dissipation PC
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
1
150
55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
(0.85)
0.55±0.1
0.45±0.05
321
(2.5) (2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = −1 mA, IE = 0
IC = −2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCB = −5 V, IE = 0.5 A, f = 200 MHz
VCB = −20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
80 220
1 V
1.5 V
150 MHz
45 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
80 to 160
120 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00059BED
1

2SB0819
2SB0819
PC Ta
1.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IC VCE
Ta = 25°C
IB = −40 mA
35 mA
30 mA
25 mA
20 mA
15 mA
10 mA
5 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
Ta = 75°C
25°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
VBE(sat) IC
100
IC / IB = 10
10
25°C
Ta = −25°C
1
75°C
0.1
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
600
VCE = −5 V
500
400
300 Ta = 75°C
25°C
200 25°C
100
0
0.01
0.1
1
Collector current IC (A)
10
fT IE
240
VCB = −5 V
Ta = 25°C
200
160
120
80
40
0
0.01 0.1
1
Emitter current IE (A)
10
Cob VCB
150
IE = 0
f = 1 MHz
Ta = 25°C
120
90
60
30
0
1 10 100
Collector-base voltage VCB (V)
VCER RBE
60
Ta = 25°C
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Base-emitter resistance RBE (k)
1 000
ICEO Ta
VCE = −12 V
100
10
1
0 20 40 60 80 100 120
Ambient temperature Ta (°C)
2 SJC00059BED


Features www.DataSheet4U.com Transistors 2SB081 9 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplific ation Complementary to 2SD1051 (0.4) U nit: mm 6.9±0.1 (1.5) (1.5) 3.5±0.1 2.5±0.1 (1.0) (1.0) 2.0±0.2 2.4±0.2 1.0±0.1 Parameter Collector-base vol tage (Emitter open) Collector-emitter v oltage (Base open) Emitter-base voltage (Collector open) Collector current Pea k collector current Collector power dis sipation Junction temperature Storage t emperature * Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1 150 −55 to +150 Unit V V V A A W °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 ■ Absolute Maximum Rating s Ta = 25°C (0.85) 0.55±0.1 0.45±0 .05 1: Base 2: Collector 3: Emitter M- A1 Package Note) *: Print circuit boar d: Copper foil area of 1 or more, and t he board thickness of 1.7 mm for the co llector portion cm2 ■ Electrical Ch aracteristics Ta = 25°C ± 3°C Parame ter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base.
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