128K x 16 (2-MBIT) DYNAMIC RAM
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IS41C16128
IS41C16128
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
DESCRIPTION
ISSI
ISSI®
...
Description
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IS41C16128
IS41C16128
128K x 16 (2-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
DESCRIPTION
ISSI
ISSI®
®
AUGUST 1998
FEATURES
Extended Data-Out (EDO) Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode : RAS -Only, CAS -before-RAS (CBR), and Hidden JEDEC standard pinout Single +5V ± 10% power supply Byte Write and Byte Read operation via two CAS Available in 40-pin SOJ and TSOP (Type II) Industrial temperature available
The ISSI IS41C16128 is a 131,072 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16128 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 12 ns per 16bit word. The Byte Write control, of upper and lower byte, makes the IS41C16128 ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41C16128 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16128 is packaged in a 40-pin 400-mil SOJ and TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
OE WE LCAS UCAS CAS CLOCK GENERATOR WE CONTROL LOGICS OE CONTROL LOGIC OE
CAS
WE
RAS
RAS CLOCK GENERATOR
DATA I/O BUS
REFRESH COUNTER
DATA I/O BUFFERS
ROW DECODER
RAS
COLUMN DECODERS SENSE AMPLIFIERS
I/O0-I/O15
MEMORY ARRAY 131,072 x 16
ADDRESS BUFFERS A0-A8
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